Industrial High Power IGBT Multipurpose For Welding Machine
Price: Confirm price based on product
MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Industrial High Power IGBT, High Power IGBT Multipurpose, Welding Machine High Voltage IGBT
High Power IGBT 400A/c㎡ 60KHz for Industrial Applications Product Description: High Power IGBT is a kind of Insulated Gate Bipolar Power, High Power Bipolar Transistor and Insulated Gate Bipolar Transistor. It is designed with a Narrow Mesa Design, More Optimized Groove Combination Design, Higher Re... View More
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Multipurpose High Voltage Mosfet , Stable Metal Oxide Field Effect Transistor
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Multipurpose High Voltage Mosfet, Metal High Voltage Mosfet, Stable Metal Oxide Field Effect Transistor
High Power MOSFET with Stable Process and Reliable Quality Product Description: High Power MOSFET High Power MOSFET is a type N MOSFET, which is based on the national military standard production line, the process is stable and the quality is reliable. It features low on resistance, high power and h... View More
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Power Supply Silicon Carbide SBD Multi Function Anti Surge High Power
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Power Supply Silicon Carbide SBD, Silicon Carbide SBD Multi Function, Anti Surge Sic SBD
SiC SBD with High Temperature Resistance and High Frequency Product Description: Silicon Carbide SBD – A Carbon Silicon Semiconductor The Silicon Carbide SBD is a carbon silicon semiconductor device that offers extreme low reverse recovery current and strong anti-surge current ability. This device i... View More
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Stable Silicon Schottky Barrier Rectifier Diode , Multifunctional Super Barrier Diode
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Stable Schottky Barrier Rectifier Diode, Silicon Schottky Barrier Rectifier Diode, Multifunctional Super Barrier Diode
SBD Rectifier Diode Based On The National Military Standard Production Line Product Description: Silicon Carbide Schottky Barrier Diode (SBD) is a type of rectifier diode that is used in power electronics applications to provide high frequency, high efficiency and high temperature resistance. SBD is... View More
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Durable Industrial High Power N Channel Mosfet , Heat Dissipation Mosfet Metal Oxide
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Durable High Power N Channel Mosfet, Industrial High Power N Channel Mosfet, Heat Dissipation Mosfet Metal Oxide
Reliable High Power N MOSFET with Stable Process and Advantages Product Description: High Power MOSFET is a device type designed for high voltage, high frequency and high current applications. It provides excellent low on resistance, making it suitable for power supplies, motor control and other app... View More
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Multiscene Silicon Carbide SBD High Temperature Resistance For PFC Circuit
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Multiscene Silicon Carbide SBD, Silicon Carbide SBD Temperature Resistance, PFC Circuit Silicon Carbide Diode
Silicon Carbide SBD with High Power and Extremely Low Reverse Recovery Current Product Description: Silicon Carbide SBD (SiC Schottky Barrier Diode) is a power discrete device with high temperature resistance and high efficiency. It is mainly used in PFC circuit, DC/AC inverter for solar and wind po... View More
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Multifunctional Power Transistor And IGBT High Voltage 1200V 40A
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Multifunctional Power Transistor And IGBT, Power Transistor And IGBT 1200V, 40A IGBT High Voltage
Product Description: High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power capacity. It is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. H... View More
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Metal Oxide Super Junction Transistor Multifunctional For Industry
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Metal Oxide Super Junction Transistor, Super Junction Transistor Multifunctional, Industry Metal Oxide Transistor
Power Discrete Devices Super Junction MOSFET with Ultra-low Junction Capacitance Product Description: Super Junction MOSFETs, or SJ MOSTETs, are power discrete devices with an ultra small package and ultra small internal resistance. They have ultra-low junction capacitance and are ideal for high-eff... View More
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Lighting Stable High Power MOSFET Multiscene High Speed Switching
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Lighting High Power MOSFET, Stable High Power MOSFET, Multiscene High Speed Power Mosfet
High Frequency MOSFET Product Description: High Power MOSFET is a type of high power N-channel MOSFET which operates at high frequency and provides high efficiency. It is based on the national military standard production line, with stable process and reliable quality. It is suitable for high curren... View More
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Multifunctional Silicon Carbide MOSFET High Voltage For Converter
Price: Confirm price based on product
MOQ: 600
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Multifunctional Silicon Carbide MOSFET, Silicon Carbide MOSFET High Voltage, Converter Mosfet In Series High Voltage
Product Description: Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are high-performance power semiconductors that are highly efficient, have high frequency, and are made of a unique material. SiC MOSFETs are widely used in a variety of applications, such as solar... View More
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Multipurpose SBD Mosfet , Durable Surface Mount Schottky Barrier Rectifier
Price: Confirm price based on product
MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Multipurpose SBD Mosfet, Surface Mount SBD Mosfet, Durable Surface Mount Schottky Barrier Rectifier
Product Description: Silicon Carbide SBD (also known as Silicon Carbide Schottky Rectifier Diode or Silicon Carbide Schottky Diode) is a power discrete device made of Silicon Carbide material. It features an extremely low reverse recovery current, strong anti surge current ability and high efficienc... View More
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Automotive Silicon Carbide SBD Practical For Power Electronics
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
High Light:Automotive Silicon Carbide SBD, Silicon Carbide SBD Practical, Electronics Sic SBD
Silicon Carbide SBD/Sic SBD High-Performance Material for Power Electronics Product Description: Silicon Carbide SBD, also known as Sic SBD, is a rectifier diode that offers high frequency, high power, high efficiency and high temperature resistance. It is made of silicon carbide, a material which p... View More
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High Efficiency Low Power Loss Low Voltage MOSFET Trench/SGT Process
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
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High Efficiency Low Power Loss Low Voltage MOSFET Trench/SGT Process
Price: Confirm price based on product
MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
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High Efficiency Low Power Loss Low Voltage MOSFET Trench/SGT Process
Price: Confirm price based on product
MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
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High EAS Capability Low Rds(ON) Trench Process MOSFET Synchronous Rectification
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
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High EAS Capability Low Voltage MOSFET for Wireless Charging
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MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
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Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station
Price: Confirm price based on product
MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
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Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station
Price: Confirm price based on product
MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
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Low Voltage MOSFET Trench Process High Efficiency Motor Driver for 5G Base Station
Price: Confirm price based on product
MOQ: Negotiable
Delivery Time: 2-30 days (Depends on Total Quantity)
Brand: REASUNOS
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