SiC Epitaxial Wafer
(42)
4 Inch 4H-SiC Substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm For Power Microwave
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:P-level 4H-SiC substrate, Microwave 4H-SiC substrate, 4inch 4H-SiC substrate
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to convention... View More
Contact Now
4 Inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power Microwave
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:Microwave 4H-SiC Substrate, 4 inch 4H-SiC Substrate, 4H-SiC Substrate P-Level
JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤0.3/cm2 Resistivity≥1E9Ω·cm for power and microwave devices Overview SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher therm... View More
Contact Now
4inch 4H-SiC Substrate P-Level N-Type 350.0±25.0μM MPD≤0.5/Cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:4inch SiC Substrate
4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a high thermal conductivity, SiC dissipates heat more rapidly than other semiconductor materials. This enables SiC devices to... View More
Contact Now
2 Inch Power Device High Electron Mobility Transistor Epitaxial Wafer
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... View More
Contact Now
2 Inch GaN On Silicon HEMT Epi Wafer For Power Device
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... View More
Contact Now
AlGaN barrier 4 inch GaN on Silicon HEMT Epi wafer gallium nitride GaN-on-Si
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... View More
Contact Now
6 Inch GaN On Silicon HEMT Epi Wafer Power Device Gallium Nitride GaN On Si
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... View More
Contact Now
GaN violet laser on silicon 2 inch GaN on Silicon HEMT Epi wafer UV LD Epi wafer
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... View More
Contact Now
2inch GaN on Silicon Blue LD Epi wafer GaN blue laser on silicon
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... View More
Contact Now
Blue LED GaN On Silicon Wafer Blue Laser GaN Epitaxial Wafer
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... View More
Contact Now
2inch GaN on Silicon Green LED Epi wafer Gallium Nitride on Silicon
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... View More
Contact Now
4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
Price: 1000
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... View More
Contact Now
4inch GaN on Silicon Green LED Epi wafer SiC epitaxial wafers
Price: 1000
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... View More
Contact Now
4inch uGaN on silicon undoped gallium nitride on Silicon Epitaxial Wafer
Price: 1000
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
High Light:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon Green LED Epi wafer GaN on Silicon Green LED Epi wafer are semiconductor structures formed on silicon substrate materials through epitaxial growth technology for manufacturing green light-emitting diodes (LEDs). It is a key intermediate material in the manufacturing of... View More
Contact Now
150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... View More
Contact Now
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... View More
Contact Now
4H SiC Epitaxial Wafer ≤0.2 /cm2 0.015Ω•cm—0.025Ω•cm 150.0 mm +0mm/-0.2mm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:4H SiC Epitaxial Wafer, silicon carbide wafer ISO9001, SiC Epitaxial Wafer 0.2 /Cm2
4H SiC Epitaxial Wafer ≤0.2 /Cm2 0.015Ω•Cm—0.025Ω•Cm 150.0 mm +0mm/-0.2mm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications. These wafers are 50% thinner than the standard silicon wafer, so the 200-mm diameter can be used for more SiC devices. The 200-mm size is muc... View More
Contact Now
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•Cm ≤4000/cm²150.0 mm +0mm/-0.2mm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:4H SiC Epitaxial Wafer, silicon epi wafer 0.025Ω•Cm, SiC Epitaxial Wafer 0.015Ω•Cm
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher than 1700 degrees Celsius. Alpha carbide is the most common, and has a hexagonal crystal structure similar to Wurtzite.... View More
Contact Now
P Level 2 Inch SiC Substrate For Power Devices And Microwave Devices
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:P Level SiC Substrate, Microwave Devices silicon carbide substrate, 2 Inch SiC Substrate
P-Level 4H-N/SI260um±25um 2-Inch SiC Substrate For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview Key features Optimizes targeted performance and total cost of ownership for next generation power elec... View More
Contact Now
2 Inch SiC Substrate 350μm For Demanding Power Electronics
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:2 Inch SiC Substrate, Demanding Power Electronics 2 inch wafer, SiC Substrate 350um
P-Level 2-Inch SiC Substrate 4H-N/SI260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI260μm±25μm for power devices and microwave devices Overview High crystal quality for demanding power electronics As transportation, energy and industrial markets evolve, ... View More
Contact Now