GaN Epitaxial Wafer
(68)
Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... View More
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GaN Single Crystal Substrate
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MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:GaN Single Crystal Substrate, gan epi wafer 400um, UKAS Single Crystal Substrate
2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview One of the key methods used to fabricate these devices is a light n-type doping of GaN with a low residual impurity concentration of the order of 1015 cm−3 or less. De... View More
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625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... View More
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4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect measurements. Samples with a range of Mg-doping concentrations were prepared by metalorganic ... View More
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5 X 10 mm2 M Face GaN Epitaxial Wafer Thickness 325um 375um
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MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... View More
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4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity＞0.5 Ω cm LED, Laser, PIN Epitaxial Wafer
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... View More
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4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... View More
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375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... View More
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4 inch Fe-doped Freestanding GaN Substrate Gallium Nitride Substrate
Price: Negotiable
MOQ: 1
Delivery Time: Negotiable
Brand: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... View More
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4 inch Fe-doped Freestanding GaN Substrate gallium nitride
Price: Negotiable
MOQ: 1
Delivery Time: Negotiable
Brand: Ganova
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... View More
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2 inch Un-doped Freestanding GaN Substrate
Price: Negotiable
MOQ: 1
Delivery Time: Negotiable
Brand: Ganova
1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium... View More
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12.5mm 2inch Freestanding N GaN Epi Wafer Si Doped
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:12.5mm gan epi wafer, 2inch gallium nitride wafer, 2Inch gan epi wafer
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputteri... View More
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Thickness 370um 430um 2 Inch GaN Epi Wafer Dimensions 50mm
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MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:2 Inch GaN Epi Wafer, 370um single crystal wafer, 430um GaN Epi Wafer
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently... View More
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5x10mm2 GaN Epitaxial Wafer Un Doped SI Type
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MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:GaN Epitaxial Wafer SI Type, 5x10.5mm2 gan epi wafer, 5x10.5mm2 GaN Epitaxial Wafer
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, hig... View More
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Single Crystal Gallium Nitride Semiconductor Wafer TTV 10um
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... View More
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Gallium Nitride Semiconductor Wafer 325um 375um C Plane
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... View More
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5x10mm2 Sp Face Gan Epitaxial Wafer Un Doped Si Type Gan Single Crystal Substrate
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... View More
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Un Doped N Type GaN Single Crystal Substrate 5x10mm2 M Face
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... View More
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625um To 675um 4 Inch Blue LED gallium nitride GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
Price: Negotiable
MOQ: 5
Delivery Time: 3-4 week days
Brand: GaNova
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... View More
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GaN Epitaxial Wafer Essential for High Voltage High Frequency Chip Production
Price: Negotiable
MOQ: 5
Delivery Time: 3-4 weeks
Brand: Ganova
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... View More
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